Use of a chemically active reticle carrier for photomask etching

ABSTRACT

A method and apparatus for improving etch uniformity in reticle etching by eliminating local effects at the edge of the reticle is disclosed. The present invention relates to a reticle frame which surrounds the reticle. The reticle frames are patterned with a pattern profile similar to that of the reticle to prevent edge uniformities of the reticle by allowing uniform plasma etching of the entire reticle surface. The reticle frames may also be used to move the reticle in and out of etch chambers without damaging them.

FIELD OF THE INVENTION

[0001] The present invention relates to the field of photolithographyused in fabricating semiconductor devices and, more particularly to amethod and apparatus for improving etch uniformity in reticle etching byeliminating local etching effects at the edge of the reticle.

DESCRIPTION OF THE RELATED ART

[0002] In the manufacture of semiconductor wafers, photolithography isused to pattern various layers on a wafer. A layer of resist isdeposited on the wafer and exposed using an exposure tool and a templatesuch as a mask or reticle. During the exposure process a form of radiantenergy, such as ultraviolet light, is directed through the reticle toselectively expose the resist in a desired pattern. The resist is thendeveloped to remove either the exposed portions, for a positive resist,or the unexposed portions, for a negative resist, thereby forming aresist mask on the wafer. The resist mask can then be used to protectunderlying areas of the wafer during subsequent fabrication processes,such as deposition, etching, or ion implantation processes.

[0003] An integral component of the photolithographic process is thereticle. The reticle includes the pattern corresponding to features(e.g., transistors or polygates) at a layer of the integrated circuit(IC) design. The reticle may be a transparent glass plate coated with apatterned light blocking material such as, for example, chromium. Thistype of reticle is typically referred to as a binary mask since light iscompletely blocked by the light blocking material and fully transmittedthrough the transparent glass portions.

[0004] Another type of reticle is the attenuated phase shift mask (PSM).Attenuated PSMs utilize partially transmissive regions instead of thelight blocking regions used in binary masks. The partially transmissiveregions typically pass (i.e., do not block) about three to eight percentof the light they receive. Moreover, the partially transmissive regionsare designed so that the light that they do pass is shifted by 180degrees in comparison to the light passing through the transparent(e.g., transmissive) regions.

[0005] During the fabrication of reticles, the reticle is often affectedby edge effects in the etching chamber. Reference is made to FIGS. 1-3.FIG. 1 shows a plasma etching system 10 including a radio frequency(“RF”) source power supply 11, a coil 12, a chamber 13, a dielectricplate 9, a multi-frequency bias power supply 15, and a decouplingcapacitor 16. The chamber 13 is connected to a ground potential 17.Reticle 18 is mounted onto electrode 14 which applies a bias voltage orbottom power. Electrode 14 may be an electrostatic-chuck or susceptorfor holding the reticle 18 during the etching process. Modulated-biasplasma 19 is generated in chamber 13 from source material 20. Sourcematerial may be provided to chamber 13 via one or more feed tubes 52.Reticle has a chrome layer 21 formed thereon and a patterned photoresistlayer 22 formed over chrome layer 21. Reticle 18 is reacted with plasma19 to etch a portion of a surface of chrome layer 21 according to thepatterned photoresist 22 to impart the pattern onto the reticle 18. Ascan be seen from FIGS. 1-3, the reticle 18 is positioned directly overelectrode 14. As the plasma bombards the reticle, it etches the reticleon an upper surface as well as at the edges of the reticle 18. FIG. 2shows a top view of the etched reticle and FIG. 3 shows a cross sectionof the reticle as shown in FIG. 2. The reticle suffers from edge effectsin the etching of the reticle. These edge effects are caused by theexistence of the edge of the reticle and the nonuniformity in thereticle formed due to nonuniformity of chemical loading and electricalpower at the edge of the reticle. The edge effects may be manifest as adifferent print quality at the edge of the reticle. Thus, if anintegrated circuit pattern extends to the edge of the reticle it will beadversely affected by these edge effects.

[0006] There is a need to eliminate edge effects in the reticle toprevent edge anomalies from being transferred onto an integrated circuitor onto a mask used in fabrication of an integrated circuit. This isespecially true as feature sizes continue to dramatically decrease, andas the number of features within the IC design continues to increase, itrequires reticles which can use a greater portion of the surface fortransferring a pattern to an integrated circuit. Accordingly, there is aneed and desire for a method and apparatus for eliminating edge effectsfrom the high density etchers in the formation of reticles.

SUMMARY OF THE INVENTION

[0007] The present invention provides a method and apparatus forimproving etch uniformity in reticle etching by eliminating localeffects at the edge of the reticle. Specifically, the invention relatesto a reticle carrier which surrounds the reticle and is subjected to aplasma etch along with the reticle to reduce edge non-uniformities. Thereticle carrier may also be used to move reticles in and out of etchchambers without damaging or contaminating them. To help reduce edgenon-uniformities, the reticle carriers are formed of materials similarto that of the reticle and are patterned with a pattern profile similarto that of the reticle.

[0008] Additional advantages of the present invention will be apparentfrom the detailed description and drawings, which illustrate preferredembodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The foregoing and other advantages and features of the inventionwill become more apparent from the detailed description of the preferredembodiments of the invention given below with reference to theaccompanying drawings in which:

[0010]FIG. 1 is a schematic view of a conventional plasma etchingsystem.

[0011]FIG. 2 is a top view of a conventional reticle placed on a chuck.

[0012]FIG. 3 is a view taken along the line III-III of FIG. 2.

[0013]FIG. 4 is a top view of a reticle placed on the reticle carrieraccording to the present invention.

[0014]FIG. 5 is a view of the reticle carrier of the present inventiontaken along the line V-V of FIG. 4.

[0015]FIG. 6A is a cross sectional view of the reticle and carrieraccording to a second embodiment of the present invention.

[0016]FIG. 6B is a cross sectional view of the reticle and carrieraccording to a third embodiment of the present invention.

[0017]FIG. 7 is a schematic view of a reticle plasma etching systemusing a reticle carrier according to the present invention.

[0018]FIG. 8 shows a reticle undergoing an intermediate stage ofprocessing according to the present invention.

[0019]FIG. 9 a reticle undergoing a processing according to the presentinvention at a point subsequent to that shown in FIG. 8.

[0020]FIG. 10 a reticle undergoing a processing according to the presentinvention at a point subsequent to that shown in FIG. 9.

[0021]FIG. 11 a reticle undergoing a processing according to the presentinvention at a point subsequent to that shown in FIG. 10.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0022] In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized, and thatstructural, logical and electrical changes may be made without departingfrom the spirit and scope of the present invention. The followingdetailed description is, therefore, not to be taken in a limiting sense,as the scope of the present invention is defined by the appended claims.

[0023] Reference is now made to FIG. 4. This figure shows a top view ofthe reticle 118 and frame 123 surrounding reticle 118 according to thepresent invention. While the reticle 118 is depicted as square in shapeand the frame 123 is depicted as being circular in shape, it should beunderstood that these components could be any desired shape. Forexample, both the reticle 118 and the frame 123 may be rectangular inshape. The reticle 118 may be formed of any suitable material forexample, silica glass, fused quartz glass, borosilicate glass or anothermaterial transparent to various types of radiation commonly used insemiconductor lithographic operations. Preferably the reticle is formedof quartz. Further, the reticle may be any reticle including a lightblocking reticle, a phase shifting reticle, an attenuated phase shiftingreticle, a hard phase shift reticle or a multi-layered phase shiftingreticles.

[0024] Reticle 118 has formed thereon patterned light blocking orpartially light transnissive regions 121 formed on the surface of thereticle 118 depending upon whether the reticle is a binary reticle or aphase shifting reticle. The light blocking regions 121 can be ahomogeneous metal layer, such as chrome, gold, or the like.Alternatively, the light blocking regions 121 may be a compositematerial of different metals, such as chrome and gold, or chrome andanother metal, or the like. In yet another alternative, partially lighttransmissive regions 121 can be formed of any attenuating materialemployed in a phase shifting mask, such as, for example, molybdenumsilicide.

[0025] The reticle 118 is placed on frame 123. Frame 123 is formed of amaterial similar to that of reticle 118 such that the reticle 118 andframe 123 have similar chemical and electrical properties in the plasmaetcher. Accordingly, it is preferable that the frame 123 be formed ofsilica glass, fused quartz glass, borosilicate glass or another materialtransparent to various types of radiation commonly used in semiconductorlithographic operations. Preferably the frame 123 is formed of quartz.

[0026] The frame 123 is also patterned with a light blocking orpartially light transmissive region similar to that of reticle 118.Thus, frame 123 has formed thereon patterned light blocking or partiallylight transmissive regions 124 formed on the surface of the frame 123depending upon whether the reticle 118 is a binary reticle or a phaseshifting reticle. The light blocking regions 124 can be a homogeneousmetal layer, such as chrome, gold, or the like. Alternatively, the lightblocking regions 124 may be a composite material of different metals,such as chrome and gold, or chrome and another metal, or the like. Inyet another alternative, partially light transmissive regions 124 can beformed of an attenuating material employed in a phase shifting mask,such as, for example, molybdenum silicide.

[0027] The light blocking or partially light transmissive region 124formed on frame 123 may be formed during the formation of light blockingor partially light transmissive region 121 on reticle 118, or at a timeprior to or subsequent to the patterning of the reticle 118. This isdiscussed in more detail below in reference to the method for formingthe reticle 118 with reference to FIGS. 8-9.

[0028] Reference is now made to FIG. 5. This figure is a cross sectionalview along line V-V as shown in FIG. 4. As can be seen from the figure,the reticle 118 is supported at a bottom layer of reticle 118 byL-shaped sections of frame 123. While frame 123 is shown as havingL-shaped sections near the bottom of the frame 123, it should beunderstood that any suitable support may be used to support reticle 118within frame 123. For example, the frame may have angled support piecesor round nubs formed at the bottom of the frame to support reticle 118.In addition, frame is designed such that the upper surface of reticle118 and frame 123 are essentially coplanar.

[0029] An alternative embodiment of the present invention is shown withreference to FIGS. 6A and 6B. Reference is first made to FIG. 6A. Thisfigure shows a reticle 138 having a portion of the bottom of the reticle138 cut away in a square cross section so as to engage protrudingportions 135 of frame 133. Reference is now made to FIG. 6B wherereticle 148 having a portion of the bottom of the reticle 148 cut awayin a triangular cross section so as to engage complimentary triangularprotruding portions 145 of frame 143. As can be seen from FIGS. 6A and6B, the upper and lower surfaces of the reticles 138, 148 are coplanarwith the upper and lower surfaces of frames 133, 143. The presence ofportions of frame 123, 133, 143 directly adjacent to the edges ofreticle 118, 138, 148 provides a more uniform etching surface on bothsides of the reticle, which, in turn, allows even chemical loading andelectrical power across both the reticle 118,138, 148 and frame 123,133, 143 using a conventional plasma etching apparatus similar to thatdepicted in FIG. 1.

[0030] Reference is made to FIG. 7 which shows a plasma etching system110 including a radio frequency (“RF”) source power supply 111, a coil112, a chamber 113, a dielectric plate 109, a multi-frequency bias powersupply 115, and a decoupling capacitor 116. The chamber 113 is connectedto a ground potential 117. Reticle 118 is mounted on a frame 123 andthen mounted onto an electrode 114 which applies a bias voltage orbottom power. Electrode 114 is formed such that electrode 114 contactsboth frame 123 and reticle 118. The electrode 114 may have a raisedcolumn structure to efficiently contact both the frame 123 and electrode118 as illustrated in FIG. 7.

[0031] Modulated-bias plasma 119 is generated in chamber 113 from sourcematerial 120. Source material 120, such as, for example, HBr, O₂, Ar,Cl, fluorocarbon containing gases and the like, may be provided tochamber 113 via one or more feed tubes 152. Reticle 118 has a lightblocking or partially light transmissive region, such as a chrome layer,121 formed thereon and a patterned photoresist layer 125 formed overchrome layer 121. Frame 123 has a light blocking or partially lighttransmissive region, such as a chrome layer, 124 formed thereon and apatterned photoresist layer 122 formed over chrome layer 124 in themanner described above. Reticle 118 and patterned frame 123 are reactedwith plasma 119 to etch a portion of a surface of chrome layer 121, 124according to the patterned photoresist 125, 122 to impart the patternonto the reticle 118 and frame 123. Reticle 118 and frame 123 are thenremoved from the chamber 113, reticle 118 is removed from frame 123 andthe remaining photoresist layers 125 are removed from the reticle 118.

[0032] As can be seen from FIG. 7, the reticle 118 is positioned withinframe 123 and both frame 123 and reticle 118 are in direct contact withelectrode 114. As the plasma bombards and etches the reticle 118, italso bombards and etches the frame 123, thus reducing the edge effect atthe upper surface of reticle 118 caused by nonuniformity in chemicalloading and electrical power at the edge of reticle 118. Thus, a greatersurface area of the reticle can be used to transfer a pattern onto anintegrated circuit. Additionally, by eliminating edge effects, thepresent invention allows the use of the perimeter of the surface of thereticle which are currently not patterned. The present inventiontherefore would provide an increase of greater than about 150 mm² ofreticle surface area to transfer patterns to an integrated circuitdevice.

[0033] The method for fabricating a reticle according to the presentinvention will now be described with reference to FIGS. 8-11. Referenceis first made to FIG. 8. A light blocking or partially lighttransmissive layer 121 is deposited over a reticle substrate 118 whichmay be formed of silica glass, fused quartz glass, borosilicate glass oranother material transparent to various types of radiation commonly usedin semiconductor lithographic operations, by any conventional method.Light blocking or partially light transmissive layer 121 is thendeposited which may be any suitable material such as a homogeneous metallayer, such as chrome, gold, or the like or a composite material ofdifferent metals, such as chrome and gold, or chrome and another metal,or the like. Light blocking or partially light transmissive layer 121may also be an attenuating material employed in a phase shifting masksuch as a molybdenum silicide. A pattern transfer layer 125 is thendeposited over light blocking or partially light transmissive layer 121.Pattern transfer layer 123 may be any material used to transfer apattern to a subsequent layer and will depend upon the radiationcharacteristics of the equipment used to form the lithographic reticle118. For example, where an electron beam direct write system is used,pattern transfer layer 125 will be formed of an electron beam sensitivephotoresist. Alternatively, where an optical system is used to generateradiation of a particular wavelength, pattern transfer layer 125 will bea conventional photoresist material sensitive to the particularwavelength. It should be understood that those skilled in the art willrecognize that many different combinations of materials can be used toform the layers shown in FIG. 8.

[0034] Reference is made to FIG. 9. After preparing reticle substrate118 with light blocking or partially light transmissive layer 121 andpattern transfer layer 125, pattern transfer layer 125 is exposed toradiation by a scanning electron beam or laser. Radiation emerging froma radiation source is imaged onto pattern transfer layer 125. Theimaging process results in the transfer of a pattern present in areticle generating data base to pattern transfer layer 125.

[0035] The pattern transfer layer 125 is written with an electron beamdirect write system and the pattern transfer layer is developed toarrive at the structure illustrated in FIG. 9. The present inventioncontemplates the use of many different types of pattern transfer layer123 depending upon the particular lithographic system to be used in thefabrication of semiconductor devices, this includes deep-ultraviolet(deep UV), x-ray, and standard i-line and g-line lithographic systems.While the transfer of pattern will typically use an electron beam directwrite system, it is also possible to perform pattern transfer using anoptical imaging process using radiation having a wavelength ranging fromthe deep-UV to about 200 nanometers to optical wavelengths up to about440 nanometers.

[0036] The lithographic pattern may includes a large number of patternedmetal features overlying reticle substrate 118. The exact arrangement ofthe lithographic pattern will depend upon the particular masking levelfor which lithographic reticle 118 is to be used. For example, wherelithographic reticle 118 is to be used to form interconnect traces in asemiconductor device, the lithographic pattern will include a series oflead traces having the necessary geometric arrangement to form metalinterconnects in a semiconductor device. In other applications, reticle118 can be used to form, for example, gate electrodes in a semiconductordevice, or via openings in an interlevel dielectric layer, and the like.

[0037] It should be understood that those skilled in the art willrecognize the reticles can be of two general types, either brightfieldor darkfield. In a brightfield reticle patterned features to betransferred are opaque features on a clear background. The process ofthe invention is intended to function with either type of reticle. Inthe case of a darkfield reticle, the lithographic pattern will appear asopenings in a sheet of opaque material overlying reticle substrate 118.

[0038] Reference is now made to FIG. 10. Reticle 118 having a lightblocking or partially light transmissive region 121 overlying reticlesubstrate 118 and a pattern transfer layer 125 overlying light blockingor partially light transmissive region 121 is placed on reticle frame123. Reticle frame 123 is independently deposited with a light blockingor partially light transmissive layer 124 and patterned with a patterntransfer layer 122. Because the frame 123 will ultimately be discarded,it is not essential that the frame be patterned with the precision ofthe electron beam writing system as used for reticle 118. In fact, theframe 123 may be patterned with crude lithography of about 2 to 3 timesthe design geometry rule of reticle 118. while the frame 123 should bepatterned with approximately the same pattern density as reticle 118,frame 123 does not need to be patterned with the same precision asreticle 118. This allows efficient use of the writing system. While thepresent invention has been described by patterning the frame 123 andreticle 118 separately, it should be understood that reticle 118 andframe 123 may also be patterned in the same step. The reticle 118 andframe 123 are then placed onto an electrode 114 in a high-density plasmaetcher, as depicted in FIG. 10.

[0039] Reference is now made to FIG. 11. After preparing reticlesubstrate 118 with light blocking or partially light transmissive region121 and pattern transfer layer 125 and preparing frame 123 with lightblocking or partially light transmissive region 124 and pattern transferlayer 122, the light blocking or partially light transmissive regions121 124 are removed from the reticle 118 and frame 123 in a high-densityplasma etcher. Since the reticle 118 and frame 123 are both formed ofmaterials that are electrically and chemically similar and have similarpattern density, edge effects in the plasma etcher are reduced oreliminated. Thus, the reticle can be formed such that a greater surfaceof the reticle may be patterned.

[0040] While the invention has been described in detail in connectionwith the preferred embodiments known at the time, it should be readilyunderstood that the invention is not limited to such disclosedembodiments. Rather, the invention can be modified to incorporate anynumber of variations, alterations, substitutions or equivalentarrangements not heretofore described, but which are commensurate withthe spirit and scope of the invention. Accordingly, the invention is notto be seen as limited by the foregoing description, but is only limitedby the scope of the appended claims.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. A method for etching a reticle comprising:providing a reticle having at least a first fight blocking or partiallylight transmissive layer thereon and at least a first pattern transferlayer on said first light blocking or partially light transmissivelayer; providing a frame having an opening for receiving said reticle,said frame having at least a second light blocking or partially lighttransmissive layer thereon and at least a second pattern transfer layeron said second light blocking or partially light transmissive layer,wherein said second light blocking or partially light transmissive layerhas physical and chemical properties which will increase uniformity ofthe etching of said reticle when said frame containing said reticle isexposed to a plasma; placing said reticle in said frame; and etchingsaid reticle and frame with a plasma.
 2. The method according to claim 1, wherein said first light blocking or partially light transmissivelayer is a light blocking layer.
 3. The method according to claim 1 ,wherein said first light blocking or partially light transmissive layeris a partially light transmissive layer.
 4. The method according toclaim 2 , wherein said second light blocking or partially lighttransmissive layer is a light blocking layer.
 5. The method according toclaim 3 , wherein said second light blocking or partially lighttransmissive layer is a partially light transmissive layer.
 6. Themethod according to claim 1 , wherein said first light blocking orpartially light transmissive layer comprises chrome.
 7. The methodaccording to claim 6 , wherein said second light blocking or partiallylight transmissive layer comprises chrome.
 8. The method according toclaim 1 , wherein said first light blocking or partially lighttransmissive layer comprises molybdenum silicide.
 9. The methodaccording to claim 8 , wherein said second light blocking or partiallylight transmissive layer comprises molybdenum silicide.
 10. The methodaccording to claim 1 , wherein said first pattern transfer layer isphotoresist.
 11. The method according to claim 1 , wherein said reticleis formed of a material selected from the group consisting of quartz,silica glass and borosilicate glass.
 12. The method according to claim11 , wherein said frame is formed of a material selected from the groupconsisting of quartz, silica glass and borosilicate glass.
 13. Themethod according to claim 1 , wherein said first light blocking orpartially light transmissive layer is selected from the group consistingof chrome, gold and molybdenum silicide.
 14. The method according toclaim 1 , wherein said second light blocking or partially lighttransmissive layer is selected from the group consisting of chrome, goldand molybdenum silicide.
 15. The method according to claim 1 , furthercomprising forming said first light blocking or partially lighttransmissive layer and said first pattern transfer layer on said firstlight blocking or partially light transmissive layer of said reticle ata time different from that of forming said second light blocking orpartially light transmissive layer and said second pattern transferlayer on said second light blocking or partially light transmissivelayer of said frame.
 16. The method according to claim 1 , furthercomprising forming said first light blocking or partially lighttransmissive layer and said first pattern transfer layer on said firstlight blocking or partially light transmissive layer of said reticle atthe same time as forming said second light blocking or partially lighttransmissive layer and said second pattern transfer layer on said secondlight blocking or partially light transmissive layer of said frame. 17.A method for forming a reticle comprising: providing a reticlesubstrate; forming at least a first light blocking or partially lighttransmissive layer thereon; forming at least a first pattern transferlayer on said first light blocking or partially light transmissivelayer; patterning said pattern transfer layer with a predeterminedpattern; providing a frame having an opening to support said reticle;forming at least a second light blocking or partially light transmissivelayer on said frame; forming at least a second pattern transfer layer onsaid second light blocking or partially light transmissive layer,wherein said second light blocking or partially light transmissive layerhas physical and chemical properties which will increase uniformity ofthe etching of said reticle when said frame containing said reticle isexposed to a plasma; patterning said second pattern transfer layer witha predetermined pattern; placing said reticle in said frame; and etchingsaid reticle and said frame with a plasma.
 18. The method according toclaim 17 , wherein forming said first light blocking or partially lighttransmissive layer includes forming a light blocking layer.
 19. Themethod according to claim 17 , wherein forming said first light blockingor partially light transmissive layer includes forming a partially lighttransmissive layer.
 20. The method according to claim 18 , whereinforming said second light blocking or partially light transmissive layerincludes forming a light blocking layer.
 21. The method according toclaim 17 , wherein forming said second light blocking or partially lighttransmissive layer includes forming a partially light transmissivelayer.
 22. The method according to claim 17 , wherein forming said firstlight blocking or partially light transmissive layer includes forming achrome layer.
 23. The method according to claim 22 , wherein formingsaid second light blocking or partially light transmissive layerincludes forming a chrome layer.
 24. The method according to claim 17 ,wherein forming said first light blocking or partially lighttransmissive layer comprises forming a molybdenum silicide layer. 25.The method according to claim 24 , wherein forming said second lightblocking or partially light transmissive layer comprises forming amolybdenum silicide layer.
 26. The method according to claim 17 ,wherein said first pattern transfer layer is photoresist.
 27. The methodaccording to claim 17 , wherein said first pattern transfer layer ispatterned by an electron beam.
 28. The method according to claim 17 ,wherein an upper surface of said reticle and an upper surface of saidframe are coplanar.
 29. The method according to claim 17 , wherein saidreticle is formed of a material selected from the group consisting ofquartz, silica glass and borosilicate glass.
 30. The method according toclaim 29 , wherein said frame is formed of a material selected from thegroup consisting of quartz, silica glass and borosilicate glass.
 31. Themethod according to claim 17 , wherein said first light blocking orpartially light transmissive layer is selected from the group consistingof chrome, gold and molybdenum silicide.
 32. The method according toclaim 31 , wherein said second light blocking or partially lighttransmissive layer is selected from the group consisting of chrome, goldand molybdenum silicide.
 33. The method according to claim 30 , whereinsaid reticle and said frame are formed of the same material.
 34. Themethod according to claim 32 , wherein said first and second lightblocking or partially light transmissive layer are formed of the samematerial.
 35. A method for etching a reticle comprising: placing areticle having a patterned layer thereon to be etched in a frame,whereby said edges of said reticle abut inside side edges of said frameand a top layer of said reticle is coplanar with a top layer of saidframe, said frame having a property of reducing side edge effects fromforming in said reticle when said reticle is placed in said frame andsaid reticle and said frame are exposed to a plasma etching environment;and etching said reticle while in said frame in a plasma etchingenvironment.
 36. The method according to claim 35 , wherein said reticleis formed of a material selected from the group consisting of quartz,silica glass and borosilicate glass.
 37. The method according to claim35 , wherein said frame is formed of a material selected from the groupconsisting of quartz, silica glass and borosilicate glass.
 38. Themethod according to claim 35 , wherein said reticle is patterned with alayer is selected from the group consisting of chrome, gold andmolybdenum silicide.
 39. The method according to claim 35 , wherein saidframe is patterned with a layer is selected from the group consisting ofchrome, gold and molybdenum silicide.
 40. The method according to claim35 , wherein said reticle and said frame are formed of the samematerial.
 41. The method according to claim 40 , wherein said reticleand said frame are formed of quartz.
 42. The method according to claim35 , wherein said reticle and frame are patterned with the samematerial.
 43. The method according to claim 42 , wherein said materialis chrome.
 44. A patterned frame for holding a reticle comprising; abody; an opening formed in said body for receiving a reticle thereinsuch that the outer sides of a reticle are adjacent to the inner sidesdefining said opening of said frame; a holding member formed in a lowerportion of said body to support the reticle; a light blocking orpartially light transmissive layer formed on an upper surface of saidbody; and a patterned photoresist layer formed on said light blocking orpartially light transmissive layer.
 45. The frame according to claim 44, wherein said frame is formed of quartz.
 46. The frame according toclaim 44 , wherein said light blocking or partially light transmissivelayer includes chrome.
 47. The frame according to claim 44 , whereinsaid light blocking or partially light transmissive layer includesmolybdenum silicide.
 48. The frame according to claim 44 , wherein saidholding member is an abutment.
 49. The frame according to claim 48 ,wherein said abutment is an L-shaped member.
 50. The frame according toclaim 44 , wherein a top surface of said frame and a top surface of thereticle are coplanar when said reticle is placed in the opening in saidframe.
 51. The frame according to claim 44 , wherein said opening isrectangular.
 52. The frame according to claim 51 , wherein said frame iscircular.
 53. An apparatus for etching a reticle comprising; (i) anplasma etching chamber including a support electrode; (ii) a reticleframe supported by said electrode, including: a body; an opening formedin said body for receiving a reticle therein such that the outer sidesof a reticle are adjacent to the inner sides defining said opening ofsaid frame; a holding member formed in a lower portion of said body tosupport the reticle; a light blocking or partially light transmissivelayer formed on an upper surface of said body; and a patternedphotoresist layer formed on said light blocking or partially lighttransmissive layer.
 54. The apparatus according to claim 53 , whereinsaid frame is formed of a material selected from the group consisting ofquartz, borosilicate glass and silica glass.
 55. The apparatus accordingto claim 53 , wherein said light blocking or partially lighttransmissive layer is selected from the group consisting of chrome, goldor molybdenum silicide.
 56. The apparatus according to claim 53 ,wherein said holding member is an abutment.
 57. The apparatus accordingto claim 56 , wherein said abutment is an L-shaped member.
 58. Theapparatus according to claim 53 , wherein said opening is rectangular.59. The apparatus according to claim 53 , wherein said abutment has atriangular cross-section.
 60. The apparatus according to claim 58 ,wherein said frame is circular.
 61. The apparatus according to claim 53, wherein said electrode is formed to contact said frame and the reticleplaced in said frame.
 62. The apparatus according to claim 61 , whereinsaid electrode has a rectangular protrusion to contact the reticle inthe opening in said frame.
 63. The apparatus according to claim 53 ,wherein a top surface of said frame and a top surface of the reticle arecoplanar when said reticle is placed in the opening in said frame. 64.An apparatus comprising; (i) an plasma etching chamber including asupport electrode; (ii) a reticle frame supported by said electrode,including: a body; an opening formed in said body for receiving areticle therein such that the outer sides of a reticle are adjacent tothe inner sides defining said opening of said frame; a holding memberformed in a lower portion of said body to support the reticle; a lightblocking or partially light transmissive layer formed on an uppersurface of said body; and a patterned photoresist layer formed on saidlight blocking or partially light transmissive layer; and (iii) apatterned reticle, having a light blocking or partially lighttransmissive layer thereon, placed in said opening of said frame. 65.The apparatus according to claim 64 , wherein a top surface of saidframe and a top surface of the reticle are coplanar when said reticle isplaced in the opening in said frame.
 66. The apparatus according toclaim 64 , wherein said frame and said reticle are formed of a materialselected from the group consisting of quartz, borosilicate glass andsilica glass.
 67. The apparatus according to claim 64 , wherein saidlight blocking or partially light transmissive layer is selected fromthe group consisting of chrome, gold or molybdenum silicide.
 68. Theapparatus according to claim 64 , wherein said holding member is anabutment.
 69. The apparatus according to claim 68 , wherein saidabutment is an L-shaped member.
 70. The apparatus according to claim 64, wherein said opening is rectangular.
 71. The apparatus according toclaim 70 , wherein said frame is circular.
 72. The apparatus accordingto claim 64 , wherein said electrode is formed to contact said frame andthe reticle placed in said frame.
 73. The apparatus according to claim72 , wherein said electrode has a cylindrical protrusion to contact thereticle in the opening in said frame.